Some practical concerns on isothermal electromigration tests

IEEE Transactions on Semiconductor Manufacturing

Volumn 14, Issue 4, 2001, Pages 387-394

  Huang, Jun Cheng Andy ^b   Chien, Wei Ting Kary ^a,b   Huang, Charles Hung Jia ^c  

^a IEEE

^b Advanced Semiconductor Manufacturing Corporation   (China)

^c SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

Black model; Confidence interval; Control limit; Cpk; Ea; EM; FA; Isothermal; PLR; WLR; WLRC

Indexed keywords

ACTIVATION ENERGY; DEGRADATION; ELECTROMIGRATION; FAILURE ANALYSIS; RELIABILITY; SEMICONDUCTOR DEVICE TESTING; TEMPERATURE;

ISOTHERMAL ELECTROMIGRATION TESTS; PACKAGE LEVEL RELIABILITY; WAFER LEVEL RELIABILITY TESTS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035508267     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.964326     Document Type: Article

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