High-performance implanted base silicon bipolar technology for RF applications

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2514-2519

  Bock J ^a   Knapp, H ^a   Aufinger, K ^a   Meister, T F ^a   Wurzer, M ^a   Boguth, S ^a   Treitinger, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Bipolar technology; Bipolar transistor; Microwave circuits; Radio frequency (RF) circuits

Indexed keywords

LOGIC CIRCUITS; MICROWAVE CIRCUITS; OSCILLATIONS; PERFORMANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TECHNOLOGY;

BIPOLAR TECHNOLOGY; CURRENT MODEL LOGIC; EMITTER COUPLED LOGIC; IMPLANTED BASE SILICON BIPOLAR TECHNOLOGY; OSCILLATION FREQUENCIES; RADIO FREQUENCY CIRCUITS;

BIPOLAR TRANSISTORS;

EID: 0035505513     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960376     Document Type: Article

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