In-situ doped emitter-polysilicon for 0.5 μm silicon bipolar technology

European Solid-State Device Research Conference

Volumn , Issue , 1995, Pages 421-424

  Bock J ^a,b   Franosch, M ^a   Schafer, H ^a   Von Philipsborn, H ^b   Popp, J ^a  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON BIPOLAR TECHNOLOGY;

EID: 0347351333     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)