50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 108-109

  Boeck, J ^a   Felder, A ^a   Meister, T F ^a   Franosch, M ^a   Aufinger, K ^a   Wurzer, M ^a   Schreiter, R ^a   Boguth, S ^a   Treitinger, L ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EMITTER COUPLED LOGIC CIRCUITS; FREQUENCIES; FREQUENCY DIVIDING CIRCUITS; GATES (TRANSISTOR); ION IMPLANTATION; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CUTOFF FREQUENCY; GATE DELAY; GAUSSIAN DOPING PROFILES; IMPLANTED BASE SILICON BIPOLAR TECHNOLOGY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MAXIMUM OSCILLATION FREQUENCIES; POLYSILICON; PROCESS COMPLEXITY; STATIC FREQUENCY DIVIDER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029714968     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)