0.5 μm/60 GHz fmax implanted base Si bipolar technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1998, Pages 160-163

  Boeck, J ^a   Meister, T F ^a   Knapp, H ^a   Aufinger, K ^a   Wurzer, M ^a   Gabl, R ^a   Pohl, M ^a   Boguth, S ^a   Franosch, M ^a   Treitinger, L ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRIC RESISTANCE; ION IMPLANTATION; MASKS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

LOW ENERGY IMPLANTATION;

BIPOLAR TRANSISTORS;

EID: 0032320787     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)