100-GHz fT Si homojunction bipolar technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 106-107

  Ohue, Eiji ^a   Kiyota, Yukihiro ^a   Onai, Takahiro ^a   Tanabe, Masamichi ^a   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; EMITTER COUPLED LOGIC CIRCUITS; FREQUENCIES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BORON PROFILES; DELAY TIME; HOMOJUNCTION BIPOLAR TECHNOLOGY; IN SITU BORON DOPED POLYSILICON; MAXIMUM OSCILLATION FREQUENCY; RAPID VAPOR PHASE DOPING; SCALABILITY; SWITCHING CURRENT; TUNGSTEN ELECTRODE;

BIPOLAR TRANSISTORS;

EID: 0029717428     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)