Low-temperature formation of SiO2 and high dielectrics constant material for ULSI in 21st century

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 3-12

  Ohmi, Tadahiro ^a   Sekine, Katsuyuki ^a   Kaihara, Ryu ^a   Saito, Yuji ^a   Shirai, Yasuyuki ^a   Hirayama, Masaki ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; FILM PREPARATION; LOW TEMPERATURE OPERATIONS; NITRIDING; OXIDATION; PERMITTIVITY; PLASMA DENSITY; SILICA; SILICON NITRIDE; SLOT ANTENNAS; ULSI CIRCUITS;

LOW TEMPERATURE FORMATION; PLASMA PROCESSING;

ULTRATHIN FILMS;

EID: 0033353906     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-3     Document Type: Conference Paper

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