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Volumn 107, Issue 1-4, 1996, Pages 268-272

Defect production in silicon irradiated with 5.68 GeV Xe ions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000582385     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01152-8     Document Type: Article
Times cited : (25)

References (25)
  • 10
    • 0041128863 scopus 로고
    • Paramagnetic defects in silicon irradiated with 40 MeV as ions
    • Heidelberg, Germany
    • A.V. Dvurechenskii, A.A. Karanovich, A.V. Rybin, Paramagnetic Defects in Silicon Irradiated with 40 MeV As Ions, presented at Int. Conf. IBMM-92, Heidelberg, Germany, 1992.
    • (1992) Int. Conf. IBMM-92
    • Dvurechenskii, A.V.1    Karanovich, A.A.2    Rybin, A.V.3
  • 11
    • 0041128864 scopus 로고
    • Ph.D. thesis, Belarussian State University, Minsk (in Russian)
    • A.R. Chelyadinskii, Ph.D. thesis, Belarussian State University, Minsk (1973) (in Russian).
    • (1973)
    • Chelyadinskii, A.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.