Analytical model of large-signal DC I-V characteristics for 4H-SiC RF power MESFET's

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 9, 2001, Pages 1160-1164

  Yang, Lin An ^a   Zhang, Yi Men ^a   Lü, Hong Liang ^a   Zhang, Yu Ming ^a   Yu, Chun Li ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

4H SiC; DC I V characteristics; Nonlinear large signal model; RF power MESFET

Indexed keywords

ELECTRIC CURRENT CONTROL; MATHEMATICAL MODELS; MICROWAVES; SIGNAL PROCESSING; SILICON CARBIDE; VOLTAGE CONTROL;

NONLINEAR LARGE SIGNAL MODEL; SHORT CHANNEL MICRO WAVE;

MESFET DEVICES;

EID: 0035467409     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. GaAs FET device and circuit simulation in SPICE
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5. An empirical-table based FET model
6. Design of S-band 90-watt solid state power amplifier module using an improved nonlinear FET model
7. A large-signal model of self-aligned gate GaAs FET's for high-efficiency power-amplifier design
8. An improved DC model for circuit analysis programs for submicron GaAs MESFET's
9. An improved chalmers model for a GaAs MESFET
10. A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), Pulsed S-parameters measurements
11. Physics of Semiconductor Devices
12. Effects of incomplete ionization of acceptors on 6H-SiC MOSFET