Improved Chalmers model for a GaAs MESFET

Microwave and Optical Technology Letters

Volumn 24, Issue 5, 2000, Pages 311-316

  Xiao, Q ^a   Ooi, B L ^a   Ma, J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; INTERMODULATION; MICROWAVE AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION; VOLTAGE MEASUREMENT;

CHALMERS LARGE-SIGNAL MODEL;

MESFET DEVICES;

EID: 0033882460     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(20000305)24:5<311::AID-MOP9>3.0.CO;2-F     Document Type: Article

References (7)

1. I. Angelov, H. Zirath, and N. Rorsman, A new empirical nonlinear model for HEMT and MESFET devices, IEEE Trans Microwave Theory Tech 40 (1992), 2258-2266.
2. T. Fernández, Y. Newport, J.M. Zamanillo, A. Tazón, and A. Mediavilla, Extracting a bias-dependent large signal MESFET model from pulsed I/V measurements, IEEE Trans Microwave Theory Tech 44 (1992), 372-378.
3. M. Paggi, P.H. Williams, and J.M. Borrego, Nonlinear GaAs MESFET modeling using pulsed gate measurements, IEEE Trans Microwave Theory Tech 36 (1988), 1593-1597.
4. J.A. Reynoso-Hernández et al., Full RF characterization for extracting the small-signal equivalent circuit in microwave FET's, IEEE Trans Microwave Theory Tech 44 (1996), 2625-2633.
5. P.M. White et al., Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements, IEEE Microwave Guided Wave Lett 3 (1996). 453-454.
6. G. Dambrine et al., A new method for determining the FET small-signal equivalent circuit, IEEE Trans Microwave Theory Tech 36 (1988), 1151-1159.
7. A.E. Parker and J.B. Scott, Intermodulation nulling in GaAs MESFETs, Electron Lett 29 (1988), 1961-1962.