Effects of incomplete ionization of acceptors on 6H-SiC MOSFET

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 7, 2001, Pages 888-891

  Shang, Ye Chun ^a   Zhang, Yi Men ^a   Zhang, Yu Ming ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Electrical characteristics; Incomplete ionization; MOSFET; SiC

Indexed keywords

COMPUTER SIMULATION; IONIZATION OF SOLIDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CHARGE SHEET MODEL; INCOMPLETE IONIZATION; SUBTHRESHOLD REGION;

MOSFET DEVICES;

EID: 0035410890     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Study of SiC material and devices