메뉴 건너뛰기




Volumn E82-C, Issue 7, 1999, Pages 1047-1053

Design of S-band 90-watt solid-state power amplifier module using an improved nonlinear FET model

Author keywords

And power amplifier; Gaas fet; MMIC; Nonlinear model

Indexed keywords

INDUCTANCE; IR DROP; NONLINEAR MODEL; OUTPUT POWER; POWER ADDED EFFICIENCY; SOLID STATE POWER AMPLIFIERS;

EID: 0033157618     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (16)
  • 2
    • 0027875453 scopus 로고
    • 12-KW S-band solid-state transmitter for modern radar
    • Dec.
    • M. Hanczor and M. Kumar12-KW S-band solid-state transmitter for modern radarIEEE Trans. Microwave Theory & Tech. , vol. 41, no. 12, pp. 2237-2242, Dec. 1993.
    • (1993) IEEE Trans. Microwave Theory & Tech. , vol.41 , Issue.12 , pp. 2237-2242
    • Hanczor, M.1    Kumar, M.2
  • 3
    • 33746360702 scopus 로고
    • A large signal FET model for use in the design on nonlinear microwave circuits
    • T. H. Chen, Y. C. Chang, E. Y. Chang, and J. ChenA large signal FET model for use in the design on nonlinear microwave circuitsAsia Pacific Conference Dig. , vol. 1, pp. 7/26-7-291993.
    • (1993) Asia Pacific Conference Dig. , vol.1 , pp. 726-729
    • Chen, T.H.1    Chang, Y.C.2    Chang, E.Y.3    Chen, J.4
  • 4
    • 0025540179 scopus 로고
    • Modeling MESFET's for intermoduration analysis of mixers and amplifiers
    • Dec.
    • S. A. Maas and D. NelsonModeling MESFET's for intermoduration analysis of mixers and amplifiersIEEE Trans. Microwave Theory & Tech. , vol. 38, no. 12, pp. 1964-1971, Dec. 1990.
    • (1990) IEEE Trans. Microwave Theory & Tech. , vol.38 , Issue.12 , pp. 1964-1971
    • Maas, S.A.1    Nelson, D.2
  • 5
    • 79960354246 scopus 로고    scopus 로고
    • A new empirical nonlinear model for HEMT and MESFET devices
    • Dec. 1992.
    • I. Angelov, H. Zirath, and N. RorsmanA new empirical nonlinear model for HEMT and MESFET devicesIEEE Trans. Microwave Theory & Tech. , vol. 40, no. 12, pp. 2258-22G6, Dec. 1992.
    • IEEE Trans. Microwave Theory & Tech. , vol.40 , Issue.12
    • Angelov, I.1    Zirath, H.2    Rorsman, N.3
  • 6
    • 0019020915 scopus 로고
    • A MESFET model for use in the design of GaAs integrated circuits
    • W. R. CurticeA MESFET model for use in the design of GaAs integrated circuitsIEEE Trans. Microwave Theory & Tech. , vol. MTT-28, no. 5, pp. 448-4551980.
    • (1980) IEEE Trans. Microwave Theory & Tech. , vol.MTT-28 , Issue.5 , pp. 448-455
    • Curtice, W.R.1
  • 10
    • 0020878580 scopus 로고    scopus 로고
    • A theory for the prediction of GaAs FET load-pull power contours
    • S. O. CrippsA theory for the prediction of GaAs FET load-pull power contours1983 IEEE MTT-S Int. Microwave Symp. Dig. , pp. 221-218.
    • 1983 IEEE MTT-S Int. Microwave Symp. Dig. , pp. 221-1218
    • Cripps, S.O.1
  • 11
    • 0022131026 scopus 로고
    • New algorithms for the automated microwave tuner test system
    • Sept.
    • S. M. PerlowNew algorithms for the automated microwave tuner test systemRCA Rev. , vol. 46, no. 3, pp. 341-355, Sept. 1985.
    • (1985) RCA Rev. , vol.46 , Issue.3 , pp. 341-355
    • Perlow, S.M.1
  • 12
    • 33746358653 scopus 로고    scopus 로고
    • A non-linear GaAs MESFET drain current model for a microwave characteristic
    • June
    • K. Fujii, K. Ogawa, and Y. TakanoA non-linear GaAs MESFET drain current model for a microwave characteristicIEICE Trans. , vol. J80-C-I, no. G, pp. 279-288, June 1997.
    • (1997) IEICE Trans. , vol.J80-C-I , pp. 279-288
    • Fujii, K.1    Ogawa, K.2    Takano, Y.3
  • 13
    • 0022320823 scopus 로고
    • A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers
    • W. R. Curtice and M. EttenbergA nonlinear GaAs FET model for use in the design of output circuits for power amplifiersIEEE Trans. Microwave Theory fc Tech. , vol. MTT-33, no. 12, p. 13831985.
    • (1985) IEEE Trans. Microwave Theory Fc Tech. , vol.MTT-33 , Issue.12 , pp. 1383
    • Curtice, W.R.1    Ettenberg, M.2
  • 14
    • 85027139174 scopus 로고    scopus 로고
    • Principle of nonlinear active device modeling for circuit simulation
    • [15] K. Fujii, K. Ogawa, and Y. TakanoThe consideration of voltage controlled charge sources controlled by two voltage sources for a GaAs MESFET large signal modelIEICE Trans. , vol. J80-C-I, Sept.
    • D. E. Root and B. HughesPrinciple of nonlinear active device modeling for circuit simulationProc. 32nd IEEE MTT ARFTG conference Dig. , Temp AZ, p. 3, Dec. 1988. [15] K. Fujii, K. Ogawa, and Y. TakanoThe consideration of voltage controlled charge sources controlled by two voltage sources for a GaAs MESFET large signal modelIEICE Trans. , vol. J80-C-I, no. 9, pp. 414-422, Sept. 1997.
    • (1997) Proc. 32nd IEEE MTT ARFTG Conference Dig. , Temp AZ, P. 3, Dec. 1988. , Issue.9 , pp. 414-422
    • Root, D.E.1    Hughes, B.2
  • 15
    • 0027806360 scopus 로고    scopus 로고
    • A rigorous yet simple method for determining stability of linear N-port networks
    • W. Struble and A. PlatzkerA rigorous yet simple method for determining stability of linear N-port networks1993 IEEE GaAs 1C Technical Dig. , pp. 251-254.
    • 1993 IEEE GaAs 1C Technical Dig. , pp. 251-254
    • Struble, W.1    Platzker, A.2
  • 16
    • 85027198104 scopus 로고    scopus 로고
    • International Rectifier Corporation, Product Digest, March 1997.
    • International Rectifier Corporation, Product Digest, March 1997.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.