메뉴 건너뛰기




Volumn 45, Issue 9, 1997, Pages 1563-1571

A realistic large-signal mesfet model for SPICE

Author keywords

MESFET's; Modeling; Simulation

Indexed keywords

SOFTWARE PACKAGE SPICE;

EID: 0031236240     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.622923     Document Type: Article
Times cited : (81)

References (25)
  • 1
    • 0019020915 scopus 로고    scopus 로고
    • A MESFET model for use in the design of GaAs integrated circuits
    • MTT-28 pp. 448-56 May 1980.
    • W. R. Curtice "A MESFET model for use in the design of GaAs integrated circuits"IEEE Trans. Microwave Theory Tech. MTT-28 pp. 448-56 May 1980.
    • IEEE Trans. Microwave Theory Tech.
    • Curtice, W.R.1
  • 4
    • 0022012872 scopus 로고    scopus 로고
    • Computer calculation of large-signal GaAs FET amplifier characteristics
    • MTT-33 pp. 129-135 Feb. 1985.
    • A. Materka and T. Kacprzak "Computer calculation of large-signal GaAs FET amplifier characteristics"IEEE Trans. Microwave Theory Tech. MTT-33 pp. 129-135 Feb. 1985.
    • IEEE Trans. Microwave Theory Tech.
    • Materka, A.1    Kacprzak, T.2
  • 5
    • 0022320823 scopus 로고    scopus 로고
    • A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers
    • MTT-33 pp. 1383-1394 Dec. 1985.
    • W. R. Curtice and M. Ettenberg "A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers"IEEE Trans. Microwave Theory Tech. MTT-33 pp. 1383-1394 Dec. 1985.
    • IEEE Trans. Microwave Theory Tech.
    • Curtice, W.R.1    Ettenberg, M.2
  • 8
    • 0026173925 scopus 로고    scopus 로고
    • Three-region analytical models for MESFET's in low-voltage digital circuits
    • 26 pp. 850-858 June 1991.
    • V. K. De and J. D. Meindl "Three-region analytical models for MESFET's in low-voltage digital circuits"IEEE J. Solid-State Circuits 26 pp. 850-858 June 1991.
    • IEEE J. Solid-State Circuits
    • De, V.K.1    Meindl, J.D.2
  • 9
    • 0005352542 scopus 로고    scopus 로고
    • The EKV model: A MOST model dedicated to low-current and low-voltage analogue circuit design and simulation in
    • G. A. S. Machado Ed. London U.K.: IEE 1996 ch. 6 pp. 247-300.
    • C. C. Enz "The EKV model: A MOST model dedicated to low-current and low-voltage analogue circuit design and simulation" in Low-Power HF Microelectronics: A Unified Approach G. A. S. Machado Ed. London U.K.: IEE 1996 ch. 6 pp. 247-300.
    • Low-Power HF Microelectronics: a Unified Approach
    • Enz, C.C.1
  • 11
    • 0028480217 scopus 로고    scopus 로고
    • Implementing high-order continuity and rate dependence in SPICE models
    • 141 pp. 251-257 Aug. 1994.
    • A. E. Parker "Implementing high-order continuity and rate dependence in SPICE models"Proc. Inst. Elect. Eng. Circuits Devices and Syst. 141 pp. 251-257 Aug. 1994.
    • Proc. Inst. Elect. Eng. Circuits Devices and Syst.
    • Parker, A.E.1
  • 12
    • 84939061258 scopus 로고    scopus 로고
    • Improved MESFET characterization for analog circuit design and analysi
    • Miami Beach FL Oct. 4-7 1992 pp. 225-228.
    • A. E. Parker and D. J. Skellern "Improved MESFET characterization for analog circuit design and analysis" in IEEE GaAs 1C Symp. Tech. Digest Miami Beach FL Oct. 4-7 1992 pp. 225-228.
    • IEEE GaAs 1C Symp. Tech. Digest
    • Parker, A.E.1    Skellern, D.J.2
  • 13
    • 0022419981 scopus 로고    scopus 로고
    • Modeling frequency depen-dence of output impedance of a microwave MESFET at low frequencies
    • 21 no. 12 pp. 528-529 June 1985.
    • C. Camacho-Penalosa and C. S. Aitchison "Modeling frequency depen-dence of output impedance of a microwave MESFET at low frequencies"Electron. Lett. 21 no. 12 pp. 528-529 June 1985.
    • Electron. Lett.
    • Camacho-Penalosa, C.1    Aitchison, C.S.2
  • 16
    • 0016603256 scopus 로고    scopus 로고
    • Signal and noise properties of gallium arsenide microwave field-effect transistors
    • L. Marton Ed. New York: Academic 1975 38 pp. 195-265.
    • R. A. Pucel H. A. Haus and H. Statz "Signal and noise properties of gallium arsenide microwave field-effect transistors" in Advances in Electronics and Electron Physics L. Marton Ed. New York: Academic 1975 38 pp. 195-265.
    • Advances in Electronics and Electron Physics
    • Pucel, R.A.1    Haus, H.A.2    Statz, H.3
  • 17
    • 84937647369 scopus 로고    scopus 로고
    • A unipolar 'field-effect' transistor
    • 40 pp. 1365-1376 1952.
    • W. Shockley "A unipolar 'field-effect' transistor"Proc. IRE 40 pp. 1365-1376 1952.
    • Proc. IRE
    • Shockley, W.1
  • 20
    • 0003014485 scopus 로고    scopus 로고
    • Modeling GaAs MESFET's for inter-modulation analysis
    • 34 no. 5 pp. 295-300 May 1991.
    • S. A. Maas and D. Neilson "Modeling GaAs MESFET's for inter-modulation analysis"Microwave J. 34 no. 5 pp. 295-300 May 1991.
    • Microwave J.
    • Maas, S.A.1    Neilson, D.2
  • 21
    • 0018442981 scopus 로고    scopus 로고
    • Determination of the basic device parameters of a GaAs MESFET
    • 58 no. 3 pp. 771-797 Mar. 1979.
    • H. Fukui "Determination of the basic device parameters of a GaAs MESFET"Bell System Tech. J. 58 no. 3 pp. 771-797 Mar. 1979.
    • Bell System Tech. J.
    • Fukui, H.1
  • 22
    • 0023984067 scopus 로고    scopus 로고
    • Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies
    • 35 pp. 257-267 Mar. 1988.
    • P. H. Ladbrooke and S. R. Blight "Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies"IEEE Trans. Electron Devices 35 pp. 257-267 Mar. 1988.
    • IEEE Trans. Electron Devices
    • Ladbrooke, P.H.1    Blight, S.R.2
  • 25
    • 34648871932 scopus 로고    scopus 로고
    • Available: URL: http://www.mpce.mq.edu.au/elec/cnerf/spice/ and also available FTP: mpce.mq.edu.au/pub/elec/spiceJ.
    • (1996). SPICE Circuit Simulator. [Online]. Available: URL: http://www.mpce.mq.edu.au/elec/cnerf/spice/ and also available FTP: mpce.mq.edu.au/pub/elec/spiceJ.
    • (1996) SPICE Circuit Simulator. [Online].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.