Empirical-table based FET model

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1999, Pages 525-528

  Angelov, I ^a   Rorsman, N ^a   Stenarson, J ^a   Garcia, M ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HARMONIC GENERATION; SCATTERING PARAMETERS; TRANSCONDUCTANCE;

CHALMERS EMPIRICAL MODEL; DRAIN CURRENT; FIELD EFFECT TRANSISTOR MODEL; SPLINE FUNCTION; TABLE BASED MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033362748     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)