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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5511-5517

Influence of sputtering and annealing conditions on the structure and ferroelectric properties of Pb(Zr,Ti)O3 thin films prepared by RF magnetron sputtering

(4) Thomas, R a Mochizuki, S a Mihara, T a Ishida, T a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Dielectric constant; Ferroelectric properties; Lead zirconate titanate; Microstructure; Sputtering; Thin film

Indexed keywords

ANNEALING; COERCIVE FORCE; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; FERROELECTRICITY; FILM PREPARATION; GLASS; MAGNETRON SPUTTERING; PERMITTIVITY; PEROVSKITE; REMANENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SUBSTRATES;

SCANNING ELECTRON MICROGRAPHS (SEM);

THIN FILMS;

EID: 0035455048 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.5511 Document Type: Article

Times cited : (32)

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