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Journal of Materials Science Letters

Volumn 19, Issue 21, 2000, Pages 1913-1916

Structure and electrical properties of RF-sputtering deposited thin ferroelectric Pb(Zr0.52Ti0.48)O3 films

(4) Tunkasiri, T a Qin, Ye b Nhuapeng, W a Thamjaree, W a

a CHIANG MAI UNIVERSITY (Thailand)

b JINAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COERCIVE FORCE; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; PERMITTIVITY; POLARIZATION; REMANENCE; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

LEAD ZIRCONIUM TITANATE; RADIOFREQUENCY-SPUTTERING;

DIELECTRIC FILMS;

EID: 0034323905 PISSN: 02618028 EISSN: None Source Type: Journal
DOI: 10.1023/A:1006751130581 Document Type: Article

Times cited : (9)

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