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Volumn 231, Issue 1-2, 2001, Pages 235-241

Comparison of cadmium zinc telluride crystals grown by horizontal and vertical Bridgman and from the vapor phase

(15) Schieber, M a,b James, R B a Hermon, H b,d Vilensky, A d Baydjanov, I d Goorsky, M c Lam, T c Meerson, E d Yao, H W a,e Erickson, J a,e Cross, E a Burger, A f Ndap, J O f Wright, G a,f Fiederle, M g

a SANDIA NATIONAL LABORATORIES (United States)

b HEBREW UNIVERSITY OF JERUSALEM (Israel)

c UNIVERSITY OF CALIFORNIA (United States)

d Real Time Radiography (Israel)

e UNIVERSITY OF NEBRASKA LINCOLN (United States)

f FISK UNIVERSITY (United States)

g UNIVERSITY OF FREIBURG (Germany)

Author keywords

A1. Impurities; A1. Segregation; A1. X ray diffraction; A1. X ray topography; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II IV materials

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; INGOTS; LIQUID METALS; PHYSICAL VAPOR DEPOSITION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

HIGH PRESSURE VERTICAL BRIDGMAN (HPVB) DEPOSITION;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0035452469 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01490-7 Document Type: Article

Times cited : (32)

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