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Volumn 231, Issue 1-2, 2001, Pages 89-94

Evolution of crystallinity of GaN layers grown at low temperature on sapphire with dimethylhydrazine and triethylgallium

(4) Bourret Courchesne, E D a Ye, Q a Yu, Kin Man a Ager III, J W a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

A1. Characterization; A1. Nucleation; A3. Chemical vapor deposition processes; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting gallium compounds; B2. Semiconducting materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LOW TEMPERATURE OPERATIONS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STOICHIOMETRY; SUBSTRATES;

DIMETHYLHYDRAZINE; TRIETHYLGALLIUM;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0035452355 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01488-9 Document Type: Article

Times cited : (4)

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