In-situ measurement of He+ stopping in Si layers by low-energy ion-scattering spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1937-1939

  Matsui, Miyako ^a   Uchida, Fumihiko ^a   Nakagawa, Kiyokazu ^a   Nishida, Akio ^a  

^a HITACHI LTD   (Japan)

Author keywords

Amorphous Si; Atomic layer; Backscattering; Ge Si; He+; Low energy ion scattering spectroscopy; Si molecular beam epitaxy; Stopping power

Indexed keywords

AMORPHOUS SILICON; BACKSCATTERING; CALCULATIONS; CLEANING; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GERMANIUM; SPECTROSCOPIC ANALYSIS; SURFACES; SYNTHESIS (CHEMICAL); VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER; BACKSCATTERING MEASUREMENTS; GERMANIUM SILICON; HELIUM VON STOPPING; LOW ENERGY ION SCATTERING SPECTROSCOPY; SILICON LAYERS;

ION BEAMS;

EID: 0030101960     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1937     Document Type: Article

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