Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 138-142

  Yano, Fumiko ^a   Hiraoka, Akiko ^a   Itoga, Toshihiko ^a   Kojima, Hisao ^a   Kanehori, Keiichi ^a   Mitsui, Yasuhiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; ION IMPLANTATION; OXIDATION; SEMICONDUCTOR DEVICES; SILICA; SURFACE ROUGHNESS; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

CLEAN ROOM ATMOSPHERE; ION IMPLANTATION INDUCED DEFECTS;

SILICON WAFERS;

EID: 0030564564     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00274-7     Document Type: Article

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