Thermal conductivity of doped polysilicon layers

Journal of Microelectromechanical Systems

Volumn 10, Issue 3, 2001, Pages 360-369

  McConnell, Angela D ^b   Uma, Srinivasan ^a,b,c   Goodson, Kenneth E ^a,b  

^a IEEE

^b Stanford University   (United States)

^c PALO ALTO RESEARCH CENTER   (United States)

Author keywords

MEMS; Polysilicon; Thermal conductivity; Thin films

Indexed keywords

ALGEBRA; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HEAT TRANSFER; MICROELECTROMECHANICAL DEVICES; NUMERICAL METHODS; THERMAL CONDUCTIVITY; THERMAL VARIABLES MEASUREMENT;

BOLTZMANN TRANSPORT EQUATIONS; DOPANT CONCENTRATION; DOPED POLYSILICON LAYERS;

POLYSILICON;

EID: 0035440478     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.946782     Document Type: Article

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