Component distribution in Ge-Si crystals grown from the melt

Inorganic Materials

Volumn 35, Issue 8, 1999, Pages 763-765

  Azhdarov, P G ^a   Agaev, N A ^a  

^a INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000387445     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Glazov, V.M. and Zemskov, V.S., Fiziko-khimicheskie osnovy legirovaniya poluprovodnikov (Physicochemical Principles of Semiconductor Doping), Moscow: Nauka, 1967.
2. Azhdarov, G.Kh. and Bagirov, V.I., Growth of Homogeneous Single Crystals of Semiconductor Solid Solutions, Izv. Akad. Nauk SSSR, Neorg. Mater., 1975, vol. 11, no. 6, pp. 981-984.
3. Azhdarov, G.Kh., Musaev, A.A., Ganiev, A.S., and Shakhtakhtinskii, M.G., Control over the Composition of Homogeneous Single Crystals of Binary Solid Solutions during Melt Growth, Izv. Akad. Nauk SSSR, Neorg. Mater., 1980, vol. 16, no. 7, pp. 1155-1158.
4. Agaev, N.A., Mir-Bagirov, V.V., and Azhdarov, G.Kh., On the Feasibility of Growing Homogeneous Single Crystals of Binary Solid Solutions by Replenishing the Melt with the Second Component, Izv. Akad. Nauk SSSR, Neorg. Mater., 1989, vol. 25, no. 7, pp. 1131-1134.
5. Azhdarov, G.Kh., Kyazimzade, R.Z., and Mir-Bagirov, V.V., Uniform Doping of Silicon Crystals during Melt Growth, Elektron. Tekh., Ser. 6: Mater., 1991, no. 7 (261), pp. 57-60.
6. Romanenko, V.N., Nikitina, G.V., and Orlov, A.G., On the Growth Rate of Crystals from Concentrated Solutions, Izv. Akad. Nauk SSSR, Neorg. Mater., 1970, vol. 6, no. 7, pp. 1215-1218.
7. Azhdarov, G.Kh., Energy Spectrum of Majority Impurity States and Galvanomagnetic Properties of Doped Germanium-Silicon and III-V Crystals, Doctoral (Phys.-Math.) Dissertation, Baku, 1981.