Electron mobility in ULSI MOSFET's: Effect of interface traps and oxide nitridation

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 235-237

  Perron, L ^b   Lacaita, A L ^a,b   Pacelli, A ^a,b   Bez, R ^c  

^a IEEE

^b POLITECNICO DI MILANO   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; ULSI CIRCUITS;

CONDUCTION BAND EDGE; ELECTRON MOBILITY; GATE CHANNEL CAPACITANCE;

MOSFET DEVICES;

EID: 0031145655     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568778     Document Type: Article

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