SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1465-1470

Anodic oxidation as a low thermal budget process for passivation of SiGe

(1) Rappich, J a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

Anodic oxidation; FTIR; Photoluminescence; SiGe; TEM

Indexed keywords

DEFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANODIC OXIDES;

ANODIC OXIDATION;

EID: 0035416879 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00056-9 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.