Implementation of low thermal budget techniques to Si and SiGe MOSFET device processing

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 413-418

  Gluck M ^a   Hersener, J ^a   Umbach, H G ^a   Rappich, J ^b   Stein, J ^c  

^a DAIMLER AG   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Hetero MOSFETs; Low Thermal Budget Processing; Si SiGe Heterodevices; Suicides

Indexed keywords

BUDGET CONTROL; COBALT COMPOUNDS; DEFECTS; LEAKAGE CURRENTS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICIDES; SILICON; THRESHOLD VOLTAGE; ANNEALING; GATES (TRANSISTOR); OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; TRANSCONDUCTANCE;

DEVICE FABRICATIONS; GATE VOLTAGE SWING; HETERODEVICES; LOW THERMAL BUDGET; LOW-LEAKAGE CURRENT; MOSFETS; PROCESS TECHNIQUES; SELF ALIGNED PROCESS;

SI-GE ALLOYS; SEMICONDUCTOR DEVICE MANUFACTURE;

LOW THERMAL BUDGET (LTB) PROCESS TECHNIQUES; THRESHOLD VOLTAGES;

EID: 16944366273     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.413     Document Type: Article

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