Indium doping effect on GaN in the initial growth stage

Journal of Electronic Materials

Volumn 30, Issue 8, 2001, Pages 977-979

  Yuan, H ^a   Lu, D C ^a   Liu, X ^a   Chen, Z ^a   Wang, X ^a   Wang, D ^a   Han, P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; Indium doping; Initial growth stage; Morphology; Optical transmission; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

LOW PRESSURE METALORGANIC VAPOR PHASE EPITAXY (LP-MOVPE);

GALLIUM NITRIDE;

EID: 0035415628     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02657720     Document Type: Article

References (16)