SCOPUS 정보 검색 플랫폼

Volumn 193, Issue 1-2, 1998, Pages 23-27

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

Author keywords

GaN buffer layer; Growth parameters; Growth rate; MOVPE

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL REACTORS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

BUFFER LAYER; GROWTH PARAMETER; GROWTH RATE; LASER REFLECTANCE; MOLAR FLOW RATE;

SEMICONDUCTOR GROWTH;

EID: 0032475365 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00476-X Document Type: Article

Times cited : (8)

References (13)

1
- 0023040588
- H. Amano, N. Sawaki, I. Akasaki, Appl. Phys. Lett. 48 (1986) 353.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³

2
- 0026244249
- S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
- (1991) Jpn. J. Appl. Phys. , vol.30
- Nakamura, S.¹

3
- 0029377278
- S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Appl. Phys. Lett. 67 (1995) 1868.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1868
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴

4
- 0042625682
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku, Appl. Phys. Lett. 69 (1996) 4056.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 4056
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Sugimoto, Y.⁷ Kiyoku, H.⁸

5
- 0040744592
- S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner, H.C. Lee, J. Crystal Growth 77 (1986) 188.
- (1986) J. Crystal Growth , vol.77 , pp. 188
- DenBaars, S.P.¹ Maa, B.Y.² Dapkus, P.D.³ Danner, A.D.⁴ Lee, H.C.⁵

6
- 0025698286
- C.A. Larsen, N.I. Buchan, S.H. Li, G.B. Stringfellow, J. Crystal Growth 102 (1990) 103.
- (1990) J. Crystal Growth , vol.102 , pp. 103
- Larsen, C.A.¹ Buchan, N.I.² Li, S.H.³ Stringfellow, G.B.⁴

7
- 0024662678
- D. Mazzarese, A. Tripathi, W.C. Conner, K.A. Jones, L. Calderon, W. Eckart, J. Electron. Mater. 18 (1989) 369.
- (1989) J. Electron. Mater. , vol.18 , pp. 369
- Mazzarese, D.¹ Tripathi, A.² Conner, W.C.³ Jones, K.A.⁴ Calderon, L.⁵ Eckart, W.⁶

8
- 0002954826
- A. Zaouk, E. Salvetat, J. Sakaya, F. Maury, G. Constant, J. Crystal Growth 55 (1981) 135.
- (1981) J. Crystal Growth , vol.55 , pp. 135
- Zaouk, A.¹ Salvetat, E.² Sakaya, J.³ Maury, F.⁴ Constant, G.⁵

9
- 0026223225
- Q. Chen, P.D. Dapkus, J. Electrochem. Soc. 138 (1991) 2821.
- (1991) J. Electrochem. Soc. , vol.138 , pp. 2821
- Chen, Q.¹ Dapkus, P.D.²

10
- 0022029253
- M. Yoshida, H. Watanabe, F. Uesugi, J. Electrochem. Soc. 132 (1985) 677.
- (1985) J. Electrochem. Soc. , vol.132 , pp. 677
- Yoshida, M.¹ Watanabe, H.² Uesugi, F.³

11
- 0000148088
- M.G. Jacko, J.W. Price, Can. J. Chem. 41 (1963) 1560.
- (1963) Can. J. Chem. , vol.41 , pp. 1560
- Jacko, M.G.¹ Price, J.W.²

12
- 0001913683
- A. Thon, T.F. Kuech, Appl. Phys. Lett. 69 (1996) 55.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 55
- Thon, A.¹ Kuech, T.F.²

13
- 0007231269
- K. Kohrbruck, S. Munnix, D. Bimberg, Appl. Phys. Lett. 54 (1989) 623.
- (1989) Appl. Phys. Lett. , vol.54 , pp. 623
- Kohrbruck, K.¹ Munnix, S.² Bimberg, D.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.