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Volumn 75, Issue 14, 1999, Pages 2141-2143

Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors

(9) Levine, B F a Pinzone, C J a Hui, S a King, C A a Leibenguth, R E a Zolnowski, D R a Lang, D V a Krautter, H W a Geva, M a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; HIGH TEMPERATURE EFFECTS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON WAFERS; SUBSTRATES; THERMAL EXPANSION;

ULTRALOW-DARK-CURRENT PHOTODETECTORS; WAFER BONDING;

PHOTODETECTORS;

EID: 0032606191 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124943 Document Type: Article

Times cited : (22)

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