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Journal of Crystal Growth

Volumn 186, Issue 1-2, 1998, Pages 21-26

The substrate orientation dependence of In atom incorporation during the growth of (In,Ga)As on GaAs by molecular-beam epitaxy

(4) Pak, Kangsa a,b Fahy, Michael R a Zhang, Xiao Mei a Joyce, Bruce A a

a IMPERIAL COLLEGE LONDON (United Kingdom)

b TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

GaAs substrate with various orientation; In desorption; InGaAs; Molecular beam epitaxy

Indexed keywords

ACTIVATION ENERGY; CRYSTAL ORIENTATION; DESORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

INDIUM GALLIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032024823 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00464-8 Document Type: Article

Times cited : (5)

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