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Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 220-228

Growth of quantum wire structures by selective area chemical beam epitaxy

(4) Finnie, P a,b Buchanan, M b Lacelle, C b Roth, A P a,b

a UNIVERSITY OF OTTAWA (Canada)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TEMPERATURE;

FACETED MESA SIDEWALLS; GEOMETRIC MODEL; INDIUM GALLIUM ARSENIDE QUANTUM WELLS; INVERTED V-SHAPED MESAS; QUANTUM WIRE STRUCTURE GROWTH; SELECTIVE AREA CHEMICAL BEAM EPITAXY; SILICON DIOXIDE MASKED GALLIUM ARSENIDE SUBSTRATES;

CHEMICAL BEAM EPITAXY;

EID: 0030108585 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00749-0 Document Type: Article

Times cited : (16)

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