Fabrication of InGaAs quantum wires and dots by selective molecular beam epitaxial growth on various mesa-patterned (001)InP substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1763-1769

  Araki, Moriaki ^a   Hanada, Yuuki ^a   Fujikura, Hajime ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

InGaAs InAlAs; Mesa patterned InP substrate; Quantum dot; Quantum wire; Selective molecular beam epitaxy

Indexed keywords

EID: 0000531376     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1763     Document Type: Article

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