Room-temperature wafer bonding of Si to LiNbO3, LiTaO3 and Gd3Ga5O12 by Ar-beam surface activation

Journal of Micromechanics and Microengineering

Volumn 11, Issue 4, 2001, Pages 348-352

  Takagi, Hideki ^a   Maeda, Ryutaro ^a   Suga, Tadatomo ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; BONDING; CRYSTAL LATTICES; ETCHING; FRACTURE; GADOLINIUM COMPOUNDS; INTERFACIAL ENERGY; LITHIUM NIOBATE; TENSILE TESTING; THERMAL EXPANSION;

WAFER BONDING;

SILICON WAFERS;

EID: 0035397334     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/4/311     Document Type: Article

References (22)

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20. Critical appraisal of fracture mechanics
21. Stress analysis of cracks