Origins and characterization of low-frequency noise in GaAs MESFETs grown on InP substrates

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 123-129

  Chertouk, Mourad ^a,b,c   Chovet, Alain ^a,b,c  

^a ORANGE LABS   (France)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; X RAY ANALYSIS;

ATMOSPHERIC PRESSURE METALLORGANIC VAPOR PHASE EPITAXY; BORON IMPLANTATIONS; CARRIER MOBILITY MEASUREMENTS; CARRIER NUMBER FLUCTUATIONS; DOUBLE DIFFRACTION X RAY ANALYSIS; ELECTRON BEAM EVAPORATION; SEMICONDUCTOR PARAMETER ANALYZER; ULTRA VIOLET CHEMICAL VAPOR DEPOSITION;

MESFET DEVICES;

EID: 0029754694     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477602     Document Type: Article

References (21)

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