Effect of MeV energy He and N pre-implantation on the formation of porous silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 179, Issue 1, 2001, Pages 63-70

  Manuaba, A ^a   Paszti F ^a   Ortega, C ^b   Grosman, A ^b   Horvath Z E ^c   Szilagyi E ^a   Khanh N Q ^c   Vickridge, I ^b  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b ÉCOLE NORMALE SUPÉRIEURE   (France)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; HELIUM; ION IMPLANTATION; NITROGEN; RADIATION DAMAGE;

ANODIC ETCHING; PEAK CONCENTRATION;

POROUS SILICON;

EID: 0035371081     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00315-9     Document Type: Article

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