The quantum dot spectrometer

Applied Physics Letters

Volumn 71, Issue 24, 1997, Pages 3558-3560

  Jimenez, J L ^a   Fonseca, L R C ^a   Brady, D J ^a   Leburton, J P ^a   Wohlert, D E ^a   Cheng, K Y ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DESIGN; ELECTRON SCATTERING; FINITE DIFFERENCE METHOD; PHOTODETECTORS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL CHANNELS; QUANTUM DOT SPECTROMETER;

SPECTROMETERS;

EID: 0031343408     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120390     Document Type: Article

References (5)

1. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Deenbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
2. R. Leon, S. Farfard, D. Leonard, J. L. Merz, and P. M. Petroff, Appl. Phys. Lett. 67, 521 (1995).
3. The software and data used are similar to those used in M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995), but with a strain-corrected electron and heavy hole mass.
4. The center design corresponds to a pyramid of 12 nm base and 6 nm height, lying over a wetting layer 0.6 nm height. The random numbers used follow Gaussian distributions.
5. R. Notzel, J. Temmyo, A. Kozen, T. Tamamura, T. Fukui, and H. Hasegawa, Proceedings of the 7th Conference of Modulated Semiconductor Structures, Madrid, Spain, 1995.