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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 A, 2001, Pages

Alloy semiconductor system with tailorable band-tail: A band-state model and its verification using laser characteristics of InGaN material system

(5) Yamaguchi, A A a Kuramoto, M a Kimura, A a Nido, M a Mizuta, M a

a NEC CORPORATION (Japan)

Author keywords

Compositional fluctuation; Differential gain; Dislocation; FIELO; InGaN; Laser diode; Optical gain; Photoluminescence

Indexed keywords

FERMI LEVEL; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BAND-STATE MODEL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035358516 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l548 Document Type: Article

Times cited : (14)

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