Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 273-277

  Sugahara, T ^a   Sakai, S ^a   Lachab, M ^a   Fareed, R S Q ^a   Tottori, S ^a   Wang, T ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242887     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<273::AID-PSSB273>3.0.CO;2-O     Document Type: Article

References (10)

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