Gain characteristics of InGaN/GaN quantum well diode lasers

Applied Physics Letters

Volumn 72, Issue 12, 1998, Pages 1418-1420

  Song, Y K ^a   Kuball, M ^a   Nurmikko, A V ^a   Bulman, G E ^b   Doverspike, K ^b   Sheppard, S T ^b   Weeks, T W ^b   Leonard, M ^b   Kong, H S ^b   Dieringer, H ^b   Edmond, J ^b  

^a Brown University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; CURRENT DENSITY; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; TRANSPARENCY;

GAIN SPECTROSCOPY; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0032025791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120607     Document Type: Article

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