InP-based HFET's and RTD's for high speed digital circuitry

Conference Proceedings of the International Symposium on Signals, Systems and Electronics

Volumn , Issue , 1998, Pages 45-49

  Prost, W ^a   Auer, U ^a   Pacha, C ^a   Brennemann, A ^a   Janssen, G ^a   Bertenburg, R M ^a   Brockerhoff, W ^a   Bushehri, E ^a   Goser, K F ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCEMENT MODE TRANSISTORS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; MULTIPLE INPUT THRESHOLD LOGIC; RESONANT TUNNELING DIODES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; LOGIC DESIGN; LOGIC GATES; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; RESPONSE TIME (COMPUTER SYSTEMS); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; THRESHOLD LOGIC;

DIGITAL CIRCUITS;

EID: 0032217978     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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