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Volumn 2, Issue 3, 1996, Pages 650-653

A novel 3-D integrated HFET/RTD frequency multiplier

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; HARMONIC GENERATION; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES;

EID: 0030230112     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.571764     Document Type: Article
Times cited : (20)

References (16)
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  • 3
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    • (1993) IEEE Microwave Guided Wave Lett. , vol.3 , pp. 188-190
    • Rizzi, G.J.1    Crowe, T.W.2    Erickson, N.R.3
  • 4
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    • Harmonic multiplication using resonant tunneling
    • T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue, C. A. Correa, "Harmonic multiplication using resonant tunneling," J. Appl. Phys., vol. 64, no. 8, pp. 4248-4250, 1988.
    • (1988) J. Appl. Phys. , vol.64 , Issue.8 , pp. 4248-4250
    • Sollner, T.C.L.G.1    Brown, E.R.2    Goodhue, W.D.3    Correa, C.A.4
  • 7
    • 33744613821 scopus 로고
    • 1-xAs resonant tunneling diodes with high current peak-to-valley ratio for millimeter-wave power generation
    • 1-xAs resonant tunneling diodes with high current peak-to-valley ratio for millimeter-wave power generation," Appl. Phys. Lett., vol. 67, no. 5, p. 2643, 1990.
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  • 11
    • 0030150122 scopus 로고    scopus 로고
    • Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors
    • K. J. Chen and M. Yamamoto, "Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors," IEEE Electron Device Lett., vol. 17, no. 5, p. 235, 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , Issue.5 , pp. 235
    • Chen, K.J.1    Yamamoto, M.2
  • 12
    • 0009670911 scopus 로고
    • Novel current voltage characteristics in an InP-based resonant tunneling high electron mobility transistor
    • K. J. Chen, K. Maezawa, and M. Yamamoto, "Novel current voltage characteristics in an InP-based resonant tunneling high electron mobility transistor," Appl. Phys. Lett. vol. 67, no. 24, p. 360, 1995.
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.24 , pp. 360
    • Chen, K.J.1    Maezawa, K.2    Yamamoto, M.3
  • 13
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    • The impact of AlAs-spacer on the gate-leakage current of InP-based HFET
    • U. Auer, R. Reuter, W. Prost, and F. J. Tegude, "The impact of AlAs-spacer on the gate-leakage current of InP-based HFET," Microwave Optical Tech. Lett., vol. 11, no. 3, p. 125, 1996.
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    • Numerically generated resonant tunneling diode equivalent circuit parameters
    • K.-C. Huang, M. Carroll, G. Starnes, R. Lake, and D. Janes, "Numerically generated resonant tunneling diode equivalent circuit parameters," J. Appl. Phys., vol. 76, no. 6, p. 3850, 1994.
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  • 16
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    • Scattering parameter measurements of resonant tunneling diodes up to 40 GHz
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.