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Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 6182-6184

Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

(7) Herner, S B a,b Gossmann, H J a Pelaz, L P a,c Gilmer, G H a Jaraiz M a,c Jacobson, D C a Eaglesham, D J a

a LUCENT TECHNOLOGIES (United States)

b APPLIED MATERIALS INC (United States)

c UNIVERSITY OF VALLADOLID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001138082 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.367489 Document Type: Article

Times cited : (18)

References (16)

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