Influence of growth conditions on the defect formation in SiC ingots

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 73-76

  Anikin, M ^a   Chourou, K ^a   Pons, M ^b   Bluet, J M ^a   Madar, R ^a   Grosse, P ^c   Faure, C ^c   Basset, G ^c   Grange, Y ^c  

^a CNRS   (France)

^b UNIV GRENOBLE ALPES   (France)

^c CEA LETI   (France)

Author keywords

Enlargement; Growth front flatness; Low grain boundaries; Macrodefects; SiC sublimation growth

Indexed keywords

CRYSTAL GROWTH; GRAIN BOUNDARIES; INGOTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION;

LELY METHOD; MACRODEFECTS; SUBLIMATION GROWTH;

SILICON CARBIDE;

DEFECT;

EID: 4243249660     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00448-6     Document Type: Article

References (3)

1. M.M. Anikin, R. Madar, A. Rouault, I. Garçon, L. Di Cioccio, J.L. Robert, J. Camassel, J.M. Bluet, Inst. Phys. Conf. Ser. N 142, Chapter 1, presented ISCRM-95, Kyoto, Japan, IOP Publishing Ltd (1996), 33.
2. M. Anikin, R. Madar, Mat. Sci. Eng. B 46 (1997) 278.
3. R. Madar, M. Anikin, K. Chourou, M. Labeau, M. Pons, E. Blanquet, J.M. Dedulle, C. Bernard, S. Milita, J. Baruchel, Diam. Rel. Mat. 6 (1997) 1249.