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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 25-32

Point defect diffusion and clustering in ion implanted c-Si

(5) Libertino, Sebania a Coffa, Salvatore a Spinella, Corrado a La Magna, Antonino a Privitera, Vittorio a

a CNR IMETEM (Italy)

Author keywords

Defects; Diffusivity; Interstitial clusters; Migration; Photoluminescence; Silicon

Indexed keywords

AGGLOMERATION; ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ION IMPLANTATION; KINETIC THEORY; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; POINT DEFECTS;

INTERSTITIAL CLUSTERS; POINT DEFECT DIFFUSION;

SILICON;

EID: 0035333115 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00504-8 Document Type: Conference Paper

Times cited : (6)

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