Defect evolution in ion implanted Si: From point to extended defects

Materials Research Society Symposium - Proceedings

Volumn 504, Issue , 1999, Pages 3-14

  Libertino, Sebania ^a   Benton, Janet L ^a   Coffa, Salvatore ^a   Eaglesham, Dave J ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISSOLUTION; ELECTRON IRRADIATION; ION IMPLANTATION; NUCLEATION; POINT DEFECTS; SEMICONDUCTOR DOPING;

DEFECT EVOLUTION; FRENKEL PAIRS;

SEMICONDUCTING SILICON;

EID: 0032635559     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (31)