Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 800-806

  Ahmed, Shibly S ^a   Denton, John P ^a   Neudeck, Gerold W ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SILICA; SILICON ON INSULATOR TECHNOLOGY; ULSI CIRCUITS;

BOTTOM GATE INSULATORS;

MOSFET DEVICES;

EID: 0035326364     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1364698     Document Type: Conference Paper

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