Ammonia nitridation of thermal polyoxide to eliminate epitaxial ambient induced dielectric pinhole formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3465-3469

  Fultz, W W ^a,b   Neudeck, G W ^a  

^a PURDUE UNIVERSITY   (United States)

^b DELPHI CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CAPACITORS; DIELECTRIC FILMS; DURABILITY; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; NITROGEN; OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

DICHLOROSILANE; DIELECTRIC PINHOLES; EPITAXIAL LATERAL OVERGROWTH; NITRIDATION; NITRIDED THERMAL POLYOXIDE;

CHEMICAL REACTIONS;

EID: 0030289834     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588781     Document Type: Article

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