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Volumn 53, Issue 24, 1996, Pages 16637-16643

Mössbauer study of the proximity gettering of cobalt atoms to He-induced nanosized voids in c-Si

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Indexed keywords


EID: 0000866736     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.16637     Document Type: Article
Times cited : (11)

References (21)
  • 6
    • 84914746316 scopus 로고
    • J. M. Gibson, R. T. Tung, and J. M. Poate, in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett, MRS Symposia Proceedings No. 14 (Materials Research Society, Pittsburgh, 1983), p. 395.
    • (1983) Defects in Semiconductors II , pp. 395
    • Gibson, J.1    Tung, R.2    Poate, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.