Overpressurized bubbles versus voids formed in helium implanted and annealed silicon

Applied Physics Letters

Volumn 70, Issue 6, 1997, Pages 732-734

  Fichtner, P F P ^a,b   Kaschny, J R ^a   Yankov, R A ^a   Mucklich A ^a   Kreissig U ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000093546     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118251     Document Type: Article

References (14)

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