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Volumn 36, Issue 5, 1997, Pages 372-377

Application of the small-angle cleavage technique to thickness measurement of TEM samples

Author keywords

cleavage planes; cleaving; TEM specimen preparation; transmission electron microscopy

Indexed keywords

GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; IMAGE SEGMENTATION; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SPECIMEN PREPARATION;

EID: 0030898543     PISSN: 1059910X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0029(19970301)36:5<372::AID-JEMT5>3.0.CO;2-N     Document Type: Conference Paper
Times cited : (6)

References (9)
  • 1
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    • Cleavage, Ductility, and Tenacity in Crystals
    • B.L. Averbach, et al., eds. MIT Press, Boston
    • Gilman, J.J. (1959) Cleavage, Ductility, and Tenacity in Crystals. In: Fracture. B.L. Averbach, et al., eds. MIT Press, Boston, p. 193-224.
    • (1959) Fracture , pp. 193-224
    • Gilman, J.J.1
  • 2
    • 0009526635 scopus 로고
    • Energy relations of the surface of solids
    • Harkins, W. (1942) Energy relations of the surface of solids. J. Chem. Phys., 10:268-274.
    • (1942) J. Chem. Phys. , vol.10 , pp. 268-274
    • Harkins, W.1
  • 3
    • 84916830947 scopus 로고
    • Surface energy of germanium and silicon
    • Jaccodine, R.J. (1963) Surface energy of germanium and silicon. J. Electrochem. Soc., 110:524-527.
    • (1963) J. Electrochem. Soc. , vol.110 , pp. 524-527
    • Jaccodine, R.J.1
  • 5
    • 0026262259 scopus 로고
    • Small-angle cleavage of semiconductors for transmission electron microscopy
    • McCaffrey, J.P. (1991) Small-angle cleavage of semiconductors for transmission electron microscopy. Ultramicroscopy, 38:149-157.
    • (1991) Ultramicroscopy , vol.38 , pp. 149-157
    • McCaffrey, J.P.1
  • 6
    • 0027530653 scopus 로고
    • Improved TEM samples of semiconductors prepared by a small-angle cleavage technique
    • McCaffrey, J.P. (1993) Improved TEM samples of semiconductors prepared by a small-angle cleavage technique, Microsc. Res. Tech., 24:180-184.
    • (1993) Microsc. Res. Tech. , vol.24 , pp. 180-184
    • McCaffrey, J.P.1
  • 7
    • 0001901010 scopus 로고
    • Fundamentals of silicon fracture
    • Trans Tech Publications, Geneva: Switzerland
    • Michot, G. (1988) Fundamentals of silicon fracture, In: Crystal Properties and Preparation, vols. 17, 18, Trans Tech Publications, Geneva: Switzerland, pp. 55-98.
    • (1988) Crystal Properties and Preparation , vol.17-18 , pp. 55-98
    • Michot, G.1
  • 8
    • 0004152626 scopus 로고
    • Chilton, Radnor, PA
    • Nassau, K. (1980) Gems Made by Man. Chilton, Radnor, PA, pp. 161-162, 295.
    • (1980) Gems Made by Man , pp. 161-162
    • Nassau, K.1
  • 9
    • 0344865332 scopus 로고
    • Fracture and strength of solids
    • Orowan, E. (1949) Fracture and strength of solids. Rep. Progr. Phys. 12:48-54.
    • (1949) Rep. Progr. Phys. , vol.12 , pp. 48-54
    • Orowan, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.