Thermal relaxation of silicon islands and craters on silicon surfaces

Surface Science

Volumn 386, Issue 1-3, 1997, Pages 182-194

  Ichimiya, Ayahiko ^a   Tanaka, Yoriko ^a   Hayashi, Kazuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Evaporation and sublimation; Morphology; Roughness and topography; Scanning tunneling microscopy; Self assembly; Silicon; Single crystal surfaces; Stepped single crystal surfaces; Surface diffusion; Surface structure

Indexed keywords

ACTIVATION ENERGY; ASPECT RATIO; EVAPORATION; MORPHOLOGY; PYROLYSIS; RELAXATION PROCESSES; SINGLE CRYSTALS; SUBLIMATION; SURFACE ROUGHNESS;

SURFACE TOPOGRAPHY; THERMAL RELAXATION;

SEMICONDUCTING SILICON;

EID: 0031251570     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00309-9     Document Type: Article

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